LED strip) is a semiconductor light source. LEDs are used as indicator lamps in many devices and are increasingly used for other lighting. Introduced as a practical electronic component in 1962,early LED lights emitted low-intensity red light, but modern versions are available across the visible, ultraviolet, and infrared wavelengths, with very high brightness.
Light-emitting diodes are used in applications as diverse as aviation lighting, automotive lighting, advertising, general lighting, and traffic signals. LEDs have allowed new text, video displays, and sensors to be developed, while their high switching rates are also useful in advanced communications technology. Infrared LEDs are also used in the remote control units of many commercial products including televisions, DVD players, and other domestic appliances.
Discoveries and early devices
Green electroluminescence from a point contact on a crystal of SiC recreates H. J. Round's original experiment from 1907.
Electroluminescence as a phenomenon was discovered in 1907 by the British experimenter H. J. Round of Marconi Labs, using a crystal of silicon carbide and a cat's-whisker detector.Russian Oleg Vladimirovich Losev reported creation of the first LED in 1927. His research was distributed in Russian, German and British scientific journals, but no practical use was made of the discovery for several decades. Rubin Braunstein of the Radio Corporation of America reported on infrared emission from gallium arsenide (GaAs) and other semiconductor alloys in 1955.Braunstein observed infrared emission generated by simple diode structures using gallium antimonide (GaSb), GaAs, indium phosphide (InP), and silicon-germanium (SiGe) alloys at room temperature and at 77 kelvin.
In 1961 American experimenters Robert Biard and Gary Pittman, working at Texas Instruments, found that GaAs emitted infrared radiation when electric current was applied and received the patent for the infrared LED.
LED tubes was developed in 1962 by Nick Holonyak Jr., while working at General Electric Company. Holonyak is seen as the "father of the light-emitting diode". M. George Craford, a former graduate student of Holonyak, invented the first yellow LED and improved the brightness of red and red-orange LEDs by a factor of ten in 1972. In 1976, T.P. Pearsall created the first high-brightness, high-efficiency LEDs for optical fiber telecommunications by inventing new semiconductor materials specifically adapted to optical fiber transmission wavelengths.
Until 1968, visible and infrared LEDs were extremely costly, on the order of US $200 per unit, and so had little practical use. The Monsanto Company was the first organization to mass-produce visible LEDs, using gallium arsenide phosphide (GaAsP) in 1968 to produce red LEDs suitable for indicators. Hewlett Packard (HP) introduced LEDs in 1968, initially using GaAsP supplied by Monsanto. The technology proved to have major uses for alphanumeric displays and was integrated into HP's early handheld calculators. In the 1970s commercially successful LED devices at less than five cents each were produced by Fairchild Optoelectronics. These devices employed compound semiconductor chips fabricated with the planar process invented by Dr. Jean Hoerni at Fairchild Semiconductor. The combination of planar processing for chip fabrication and innovative packaging methods enabled the team at Fairchild led by optoelectronics pioneer Thomas Brandt to achieve the needed cost reductions. These methods continue to be used by LED producers.
The first commercial LEDs were commonly used as replacements for incandescent and neon indicator lamps, and in seven-segment LED displays, first in expensive equipment such as laboratory and electronics test equipment, then later in such appliances as TVs, radios, telephones, calculators, and even watches (see list of signal uses). These red LEDs were bright enough only for use as indicators, as the light output was not enough to illuminate an area. Readouts in calculators were so small that plastic lenses were built over each digit to make them legible. Later, other colors grew widely available and also appeared in appliances and equipment. As LED materials technology grew more advanced, light output rose, while maintaining efficiency and reliability at acceptable levels. The invention and development of the high-power white-light led to use for illumination, which is fast replacing incandescent and fluorescent lighting (see list of illumination applications). Most LEDs were made in the very common 5 mm T1¾ and 3 mm T1 packages, but with rising power output, it has grown increasingly necessary to shed excess heat to maintain reliability, so more complex packages have been adapted for efficient heat dissipation. Packages for state-of-the-art high-power LEDs bear little resemblance to early LEDs.
Illustration of Haitz's law. Light output per LED as a function of production year; note the logarithmic scale on the vertical axis
The first high-brightness blue LED was demonstrated by Shuji Nakamura of Nichia Corporation and was based on InGaN, borrowing on critical developments in GaN nucleation on sapphire substrates and the demonstration of p-type doping of GaN, which were developed by Isamu Akasaki and H. Amano in Nagoya. In 1995, Alberto Barbieri at the Cardiff University Laboratory (GB) investigated the efficiency and reliability of high-brightness LEDs and demonstrated a very impressive result by using a transparent contact made of indium tin oxide (ITO) on (AlGaInP/GaAs) LED. The existence of blue LEDs and high-efficiency LEDs quickly led to the development of the first white LED, which employed a Y3Al5O12:Ce, or "YAG", phosphor coating to mix yellow (down-converted) light with blue to produce light that appears white. Nakamura was awarded the 2006 Millennium Technology Prize for his invention.
The development of LED technology has caused their efficiency and light output to rise exponentially, with a doubling occurring about every 36 months since the 1960s, in a way similar to Moore's law. The advances are in general attributed to the parallel development of other semiconductor technologies and advances in optics and material science. This trend is called Haitz's law after Dr. Roland Haitz.
In February 2008, a luminous efficacy of 300 lumens of visible light per watt of radiation (not per electrical watt) and warm-light emission was achieved by using nanocrystals.
In 2001 and 2002, processes for growing gallium nitride (GaN) LEDs on silicon were successfully demonstrated, yielding high power LEDs reported in January 2012. Epitaxy costs could be reduced by up to 90% using six-inch silicon wafers instead of two-inch sapphire wafers.
In 2011, Zhong Li Wang from the Georgia Institute of Technology discovered that the energy efficiency of Piezoelectric UV LED's can be increased by 400% (from 2% to 8%) by using zinc oxide nanowires.
The wavelength of the light emitted, and thus its color depends on the band gap energy of the materials forming the p-n junction. In silicon or germanium diodes, the electrons and holes recombine by a non-radiative transition, which produces no optical emission, because these are indirect band gap materials. The materials used for the LED have a direct band gap with energies corresponding to near-infrared, visible, or near-ultraviolet light.
LED development began with infrared and red devices made with gallium arsenide. Advances in materials science have enabled making devices with ever-shorter wavelengths, emitting light in a variety of colors.
LEDs are usually built on an n-type substrate, with an electrode attached to the p-type layer deposited on its surface. P-type substrates, while less common, occur as well. Many commercial LEDs, especially GaN/InGaN, also use sapphire substrate.
Most materials used for LED production have very high refractive indices. This means that much light will be reflected back into the material at the material/air surface interface. Thus, light extraction in LEDs is an important aspect of LED production, subject to much research and development.
- Refractive index
In general, a flat-surface uncoated LED semiconductor chip will emit light only perpendicular to the semiconductor's surface, and a few degrees to the side, in a cone shape referred to as the light cone, cone of light, or the escape cone. The maximum angle of incidence is referred to as the critical angle. When this angle is exceeded, photons no longer penetrate the semiconductor but are instead reflected both internally inside the semiconductor crystal and externally off the surface of the crystal as if it were a mirror.
Internal reflections can escape through other crystalline faces, if the incidence angle is low enough and the crystal is sufficiently transparent to not re-absorb the photon emission. But for a simple square LED with 90-degree angled surfaces on all sides, the faces all act as equal angle mirrors. In this case the light can not escape and is lost as waste heat in the crystal.
A convoluted chip surface with angled facets similar to a jewel or fresnel lens can increase light output by allowing light to be emitted perpendicular to the chip surface while far to the sides of the photon emission point.
The ideal shape of a semiconductor with maximum light output would be a microsphere with the photon emission occurring at the exact center, with electrodes penetrating to the center to contact at the emission point. All light rays emanating from the center would be perpendicular to the entire surface of the sphere, resulting in no internal reflections. A hemispherical semiconductor would also work, with the flat back-surface serving as a mirror to back-scattered photons.
- Transition coatings
- Mounting the semiconductor chip in devices is easier to accomplish.
- The tiny fragile electrical wiring is physically supported and protected from damage.
- The plastic acts as a refractive intermediary between the relatively high-index semiconductor and low-index open air.
Efficiency and operational parameters
Typical indicator LEDs are designed to operate with no more than 30–60 milliwatts (mW) of electrical power. Around 1999, Philips Lumileds introduced power LEDs capable of continuous use at one watt. These LEDs used much larger semiconductor die sizes to handle the large power inputs. Also, the semiconductor dies were mounted onto metal slugs to allow for heat removal from the LED die.
One of the key advantages of LED-based lighting sources is high luminous efficacy. White LEDs quickly matched and overtook the efficacy of standard incandescent lighting systems. In 2002, Lumileds made five-watt LEDs available with a luminous efficacy of 18–22 lumens per watt (lm/W). For comparison, a conventional incandescent light bulb of 60–100 watts emits around 15 lm/W, and standard fluorescent lights emit up to 100 lm/W. A recurring problem is that efficacy falls sharply with rising current. This effect is known as droop and effectively limits the light output of a given LED, raising heating more than light output for higher current.
In September 2003, a new type of blue LED was demonstrated by the company Cree Inc. to provide 24 mW at 20 milliamperes (mA). This produced a commercially packaged white light giving 65 lm/W at 20 mA, becoming the brightest white LED commercially available at the time, and more than four times as efficient as standard incandescents. In 2006, they demonstrated a prototype with a record white LED luminous efficacy of 131 lm/W at 20 mA. Nichia Corporation has developed a white LED with luminous efficacy of 150 lm/W at a forward current of 20 mA. Cree's XLamp XM-L LEDs, commercially available in 2011, produce 100 lumens per watt at their full power of 10 watts, and up to 160 lumens/watt at around 2 watts input power.
Practical general lighting needs high-power LEDs,of one watt or more.Typical operating currents for such devices begin at 350 mA.
Note that these efficiencies are for the LED chip only, held at low temperature in a lab. Lighting works at higher temperature and with drive circuit losses, so efficiencies are much lower. United States Department of Energy (DOE) testing of commercial LED lamps designed to replace incandescent lamps or CFLs showed that average efficacy was still about 46 lm/W in 2009 (tested performance ranged from 17 lm/W to 79 lm/W).
Cree issued a press release on February 3, 2010 about a laboratory prototype LED achieving 208 lumens per watt at room temperature. The correlated color temperature was reported to be 4579 K.
Lifetime and failure
Main article: List of LED failure modes
Solid-state devices such as LEDs are subject to very limited wear and tear if operated at low currents and at low temperatures. Many of the LEDs made in the 1970s and 1980s are still in service today. Typical lifetimes quoted are 25,000 to 100,000 hours, but heat and current settings can extend or shorten this time significantly.
The most common symptom of LED (and diode laser) failure is the gradual lowering of light output and loss of efficiency. Sudden failures, although rare, can occur as well. Early red LEDs were notable for their short lifetime. With the development of high-power LEDs the devices are subjected to higher junction temperatures and higher current densities than traditional devices. This causes stress on the material and may cause early light-output degradation. To quantitatively classify lifetime in a standardized manner it has been suggested to use the terms L75 and L50, which is the time it will take a given LED to reach 75% and 50% light output respectively.
Like other lighting devices, LED performance is temperature dependent. Most manufacturers’ published ratings of LEDs are for an operating temperature of 25 °C. LEDs used outdoors, such as traffic signals or in-pavement signal lights, and that are utilized in climates where the temperature within the luminaire gets very hot, could result in low signal intensities or even failure.
LED light output rises at lower temperatures, leveling off depending on type at around −30C. Thus, LED technology may be a good replacement in uses such as supermarket freezer lighting and will last longer than other technologies. Because LEDs emit less heat than incandescent bulbs, they are an energy-efficient technology for uses such as freezers. However, because they emit little heat, ice and snow may build up on the LED luminaire in colder climates.This lack of waste heat generation has been observed to cause sometimes significant problems with street traffic signals and airport runway lighting in snow-prone areas, although some research has been done to try to develop heat sink technologies to transfer heat to other areas of the luminaire.
Current bright blue LEDs are based on the wide band gap semiconductors GaN (gallium nitride) and InGaN (indium gallium nitride). They can be added to existing red and green LEDs to produce the impression of white light, though white LEDs today rarely use this principle.
The first blue LEDs using gallium nitride were made in 1971 by Jacques Pankove at RCA Laboratories. These devices had too little light output to be of practical use and research into gallium nitride devices slowed. In August 1989, Cree Inc. introduced the first commercially available blue LED based on the indirect bandgap semiconductor, silicon carbide. SiC LEDs had very low efficiency, no more than about 0.03%, but did emit in the blue portion of the visible light spectrum.
In the late 1980s, key breakthroughs in GaN epitaxial growth and p-type doping ushered in the modern era of GaN-based optoelectronic devices. Building upon this foundation, in 1993 high-brightness blue LEDs were demonstrated. Efficiency (light energy produced vs. electrical energy used) reached 10%. High-brightness blue LEDs invented by Shuji Nakamura of Nichia Corporation using gallium nitride revolutionized LED lighting, making high-power light sources practical.
By the late 1990s, blue LEDs had become widely available. They have an active region consisting of one or more InGaN quantum wells sandwiched between thicker layers of GaN, called cladding layers. By varying the relative InN-GaN fraction in the InGaN quantum wells, the light emission can be varied from violet to amber. AlGaN aluminium gallium nitride of varying AlN fraction can be used to manufacture the cladding and quantum well layers for ultraviolet LEDs, but these devices have not yet reached the level of efficiency and technological maturity of the InGaN-GaN blue/green devices. If the active quantum well layers are GaN, instead of alloyed InGaN or AlGaN, the device will emit near-ultraviolet light with wavelengths around 350–370 nm. Green LEDs manufactured from the InGaN-GaN system are far more efficient and brighter than green LEDs produced with non-nitride material systems.
With nitrides containing aluminium, most often AlGaN and AlGaInN, even shorter wavelengths are achievable. Ultraviolet LEDs in a range of wavelengths are becoming available on the market. Near-UV emitters at wavelengths around 375–395 nm are already cheap and often encountered, for example, as black light lamp replacements for inspection of anti-counterfeiting UV watermarks in some documents and paper currencies. Shorter-wavelength diodes, while substantially more expensive, are commercially available for wavelengths down to 247 nm. As the photosensitivity of microorganisms approximately matches the absorption spectrum of DNA, with a peak at about 254 nm, UV LED emitting at 250–270 nm are to be expected in prospective disinfection and sterilization devices. Recent research has shown that commercially available UVA LEDs (365 nm) are already effective disinfection and sterilization devices.
Deep-UV wavelengths were obtained in laboratories using aluminium nitride (210 nm), boron nitride (215 nm) and diamond (235 nm).
There are two primary ways of producing high-intensity white-light using LEDs. One is to use individual LEDs that emit three primary colors—red, green, and blue—and then mix all the colors to form white light. The other is to use a phosphor material to convert monochromatic light from a blue or UV LED to broad-spectrum white light, much in the same way a fluorescent light bulb works.
Due to metamerism, it is possible to have quite different spectra that appear white.
White light can be formed by mixing differently colored lights; the most common method is to use red, green, and blue (RGB). Hence the method is called multi-color white LEDs (sometimes referred to as RGB LEDs). Because these need electronic circuits to control the blending and diffusion of different colors, and because the individual color LEDs typically have slightly different emission patterns (leading to variation of the color depending on direction) even if they are made as a single unit, these are seldom used to produce white lighting. Nevertheless, this method is particularly interesting in many uses because of the flexibility of mixing different colors, and, in principle, this mechanism also has higher quantum efficiency in producing white light.
There are several types of multi-color white LEDs: di-, tri-, and tetrachromatic white LEDs. Several key factors that play among these different methods, include color stability, color rendering capability, and luminous efficacy. Often, higher efficiency will mean lower color rendering, presenting a trade-off between the luminous efficiency and color rendering. For example, the dichromatic white LEDs have the best luminous efficacy (120 lm/W), but the lowest color rendering capability. However, although tetrachromatic white LEDs have excellent color rendering capability, they often have poor luminous efficiency. Trichromatic white LEDs are in between, having both good luminous efficacy (>70 lm/W) and fair color rendering capability.
Multi-color LEDs offer not merely another means to form white light but a new means to form light of different colors. Most perceivable colors can be formed by mixing different amounts of three primary colors. This allows precise dynamic color control. As more effort is devoted to investigating this method, multi-color LEDs should have profound influence on the fundamental method that we use to produce and control light color. However, before this type of LED can play a role on the market, several technical problems need solving. These include that this type of LED's emission power decays exponentially with rising temperature, resulting in a substantial change in color stability. Such problems inhibit and may preclude industrial use. Thus, many new package designs aimed at solving this problem have been proposed and their results are now being reproduced by researchers and scientists.
This method involves coating LEDs of one color (mostly blue LEDs made of InGaN) with phosphor of different colors to form white light; the resultant LEDs are called phosphor-based white LEDs. A fraction of the blue light undergoes the Stokes shift being transformed from shorter wavelengths to longer. Depending on the color of the original LED, phosphors of different colors can be employed. If several phosphor layers of distinct colors are applied, the emitted spectrum is broadened, effectively raising the color rendering index (CRI) value of a given LED.
Phosphor-based LEDs efficiency losses are due to the heat loss from the Stokes shift and also other phosphor-related degradation issues. Its efficiencies compared to normal LEDs are dependent on the spectral distribution of the resultant light output and the original wavelength of the LED itself. The efficiency of a typical YAG-based yellow phosphor converted white LED ranges from 3 to 5 times the efficiency of the original blue LED. Due to the simplicity of manufacturing the phosphor method is still the most popular method for making high-intensity white LEDs. The design and production of a light source or light fixture using a monochrome emitter with phosphor conversion is simpler and cheaper than a complex RGB system, and the majority of high-intensity white LEDs presently on the market are manufactured using phosphor light conversion.
Among the challenges being faced to improve the efficiency of LED-based white light sources are the development of more efficient phosphors as well as the development of more efficient green LEDs. The theoretical maximum for green LEDs is at 683 lumens per watt but today few green LEDs exceed even 100 lumens per watt. Today the most efficient yellow phosphor is still the YAG phosphor, with less than 10% Stoke shift loss. Losses attributable to internal optical losses due to re-absorption in the LED chip and in the LED packaging itself account typically for another 10% to 30% of efficiency loss. Currently, in the area of phosphor LED development, much effort is being spent on optimizing these devices to higher light output and higher operation temperatures. For instance, the efficiency can be raised by adapting better package design or by using a more suitable type of phosphor. Conformal coating process is frequently used to address the issue of varying phosphor thickness.
The phosphor-based white LEDs encapsulate InGaN blue LEDs inside phosphor coated epoxy. A common yellow phosphor material is cerium-doped yttrium aluminium garnet (Ce3+:YAG).
White LEDs can also be made by coating near-ultraviolet (NUV) LEDs with a mixture of high-efficiency europium-based phosphors that emit red and blue, plus copper and aluminium-doped zinc sulfide (ZnS:Cu, Al) that emits green. This is a method analogous to the way fluorescent lamps work. This method is less efficient than blue LEDs with YAG:Ce phosphor, as the Stokes shift is larger, so more energy is converted to heat, but yields light with better spectral characteristics, which render color better. Due to the higher radiative output of the ultraviolet LEDs than of the blue ones, both methods offer comparable brightness. A concern is that UV light may leak from a malfunctioning light source and cause harm to human eyes or skin.
Other white LEDs
Another method used to produce experimental white light LEDs used no phosphors at all and was based on homoepitaxially grown zinc selenide (ZnSe) on a ZnSe substrate that simultaneously emitted blue light from its active region and yellow light from the substrate.